M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.
Identifieur interne : 001289 ( Main/Exploration ); précédent : 001288; suivant : 001290M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.
Auteurs : RBID : pubmed:21967509English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Gallium, Indium.
- chemistry : Nanostructures.
- instrumentation : Luminescent Measurements, Nanotechnology.
- ultrastructure : Nanostructures.
- Electronics, Equipment Design, Equipment Failure Analysis, Particle Size.
Abstract
Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.
DOI: 10.1021/nl202686n
PubMed: 21967509
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The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">21967509</PMID><DateCreated><Year>2011</Year><Month>11</Month><Day>09</Day></DateCreated><DateCompleted><Year>2012</Year><Month>03</Month><Day>19</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1530-6992</ISSN><JournalIssue CitedMedium="Internet"><Volume>11</Volume><Issue>11</Issue><PubDate><Year>2011</Year><Month>Nov</Month><Day>9</Day></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.</ArticleTitle><Pagination><MedlinePgn>4839-45</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nl202686n</ELocationID><Abstract><AbstractText>Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Koester</LastName><ForeName>Robert</ForeName><Initials>R</Initials><Affiliation>CEA-CNRS-UJF group, Nanophysique et Semi-conducteurs, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, F-38054, France.</Affiliation></Author><Author ValidYN="Y"><LastName>Hwang</LastName><ForeName>Jun-Seok</ForeName><Initials>JS</Initials></Author><Author ValidYN="Y"><LastName>Salomon</LastName><ForeName>Damien</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Chen</LastName><ForeName>Xiaojun</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Bougerol</LastName><ForeName>Catherine</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Barnes</LastName><ForeName>Jean-Paul</ForeName><Initials>JP</Initials></Author><Author ValidYN="Y"><LastName>Dang</LastName><ForeName>Daniel Le Si</ForeName><Initials>Dle S</Initials></Author><Author ValidYN="Y"><LastName>Rigutti</LastName><ForeName>Lorenzo</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>de Luna Bugallo</LastName><ForeName>Andres</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Jacopin</LastName><ForeName>Gwénolé</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Tchernycheva</LastName><ForeName>Maria</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Durand</LastName><ForeName>Christophe</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Eymery</LastName><ForeName>Joël</ForeName><Initials>J</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>10</Month><Day>11</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>gallium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>indium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="Y">Electronics</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Luminescent Measurements</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanostructures</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanotechnology</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>10</Month><Day>11</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>10</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>10</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>3</Month><Day>20</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nl202686n</ArticleId><ArticleId IdType="pubmed">21967509</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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